UT40N03T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UT40N03T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 41 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 62 nS
Cossⓘ - Capacitancia de salida: 145 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: TO-251 TO-252 TO-220 TO-263
Búsqueda de reemplazo de UT40N03T MOSFET
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UT40N03T datasheet
ut40n03t.pdf
UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET FEATURES * RDS(ON) = 25m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen
ut40n03.pdf
UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness FEATURES * RDS(ON) = 17m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capabili
ut40n04.pdf
UNISONIC TECHNOLOGIES CO., LTD UT40N04 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR DESCRIPTION The UTC 40N04 is an N-channel enhancement mode FET using advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low on-Resistance * Fast Switching Speed
Otros transistores... UT150N04, UT20N03, UT3006, UT3009, UT30N03, UT3458, UT3N06, UT40N03, NCEP15T14, UT40N04, UT4392, UT4406, UT4410, UT4430, UT4446, UT60N03, UT60T03
History: BLM07N20-C | SVF1N60N
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