UT40N03T Specs and Replacement
Type Designator: UT40N03T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-251 TO-252 TO-220 TO-263
UT40N03T substitution
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UT40N03T datasheet
ut40n03t.pdf
UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET FEATURES * RDS(ON) = 25m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen ... See More ⇒
ut40n03.pdf
UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness FEATURES * RDS(ON) = 17m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capabili... See More ⇒
ut40n04.pdf
UNISONIC TECHNOLOGIES CO., LTD UT40N04 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR DESCRIPTION The UTC 40N04 is an N-channel enhancement mode FET using advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low on-Resistance * Fast Switching Speed ... See More ⇒
Detailed specifications: UT150N04, UT20N03, UT3006, UT3009, UT30N03, UT3458, UT3N06, UT40N03, NCEP15T14, UT40N04, UT4392, UT4406, UT4410, UT4430, UT4446, UT60N03, UT60T03
Keywords - UT40N03T MOSFET specs
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