UT40N04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UT40N04

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 157 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm

Encapsulados: TO-252

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UT40N04 datasheet

 ..1. Size:124K  utc
 ut40n04.pdf pdf_icon

UT40N04

UNISONIC TECHNOLOGIES CO., LTD UT40N04 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR DESCRIPTION The UTC 40N04 is an N-channel enhancement mode FET using advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low on-Resistance * Fast Switching Speed

 8.1. Size:261K  utc
 ut40n03.pdf pdf_icon

UT40N04

UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness FEATURES * RDS(ON) = 17m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capabili

 8.2. Size:218K  utc
 ut40n03t.pdf pdf_icon

UT40N04

UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET FEATURES * RDS(ON) = 25m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen

Otros transistores... UT20N03, UT3006, UT3009, UT30N03, UT3458, UT3N06, UT40N03, UT40N03T, AON7506, UT4392, UT4406, UT4410, UT4430, UT4446, UT60N03, UT60T03, UT65N03