UT40N04 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT40N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 157 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO-252
UT40N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT40N04 Datasheet (PDF)
ut40n04.pdf
UNISONIC TECHNOLOGIES CO., LTD UT40N04 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR DESCRIPTION The UTC 40N04 is an N-channel enhancement mode FET using advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low on-Resistance * Fast Switching Speed
ut40n03.pdf
UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness FEATURES * RDS(ON) = 17m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capabili
ut40n03t.pdf
UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET FEATURES * RDS(ON) = 25m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain1.Gate3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NVD5862N
History: NVD5862N
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