UT4410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UT4410 Datasheet (PDF)

..1. Size:218K utc
ut4410.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UT4410 Power MOSFET N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTCs high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be

9.1. Size:191K utc
ut4413.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UT4413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=8.5m @ VGS= -10V * Low capacitance * Low gate charge *

9.2. Size:119K utc
ut4414.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UT4414 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT4414 is an N-channel enhancement mode FET with excellent trench technology to provide customers perfect RDS(ON) and low gate charge. The source leads are separated to allow a Kelvin SOP-8connection to the source, which may be used to bypas

9.3. Size:262K utc
ut4411.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UT4411 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 32m @VGS = 10 V * Low capacitance * Optimized gate char

Otros transistores... UT30N03 , UT3458 , UT3N06 , UT40N03 , UT40N03T , UT40N04 , UT4392 , UT4406 , IRFZ24N , UT4430 , UT4446 , UT60N03 , UT60T03 , UT65N03 , UT70N03L , UT7410 , UT75N03 .