UT4410 Datasheet and Replacement. Cross Reference Search

UT4410 Datasheet (PDF)

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UNISONIC TECHNOLOGIES CO., LTD UT4410 Power MOSFET N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTCs high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be

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UNISONIC TECHNOLOGIES CO., LTD UT4413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=8.5m @ VGS= -10V * Low capacitance * Low gate charge *

9.2. Size:119K utc
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UNISONIC TECHNOLOGIES CO., LTD UT4414 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT4414 is an N-channel enhancement mode FET with excellent trench technology to provide customers perfect RDS(ON) and low gate charge. The source leads are separated to allow a Kelvin SOP-8connection to the source, which may be used to bypas

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UNISONIC TECHNOLOGIES CO., LTD UT4411 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 32m @VGS = 10 V * Low capacitance * Optimized gate char

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .