UT4410 Specs and Replacement

Type Designator: UT4410

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP-8

UT4410 substitution

- MOSFET ⓘ Cross-Reference Search

 

UT4410 datasheet

 ..1. Size:218K  utc
 ut4410.pdf pdf_icon

UT4410

UNISONIC TECHNOLOGIES CO., LTD UT4410 Power MOSFET N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be ... See More ⇒

 9.1. Size:191K  utc
 ut4413.pdf pdf_icon

UT4410

UNISONIC TECHNOLOGIES CO., LTD UT4413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=8.5m @ VGS= -10V * Low capacitance * Low gate charge * ... See More ⇒

 9.2. Size:119K  utc
 ut4414.pdf pdf_icon

UT4410

UNISONIC TECHNOLOGIES CO., LTD UT4414 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT4414 is an N-channel enhancement mode FET with excellent trench technology to provide customers perfect RDS(ON) and low gate charge. The source leads are separated to allow a Kelvin SOP-8 connection to the source, which may be used to bypas... See More ⇒

 9.3. Size:262K  utc
 ut4411.pdf pdf_icon

UT4410

UNISONIC TECHNOLOGIES CO., LTD UT4411 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 32m @VGS = 10 V * Low capacitance * Optimized gate char... See More ⇒

SHOW MORE

Detailed specifications: UT30N03, UT3458, UT3N06, UT40N03, UT40N03T, UT40N04, UT4392, UT4406, TK10A60D, UT4430, UT4446, UT60N03, UT60T03, UT65N03, UT70N03L, UT7410, UT75N03

Keywords - UT4410 MOSFET specs

 UT4410 cross reference

 UT4410 equivalent finder

 UT4410 pdf lookup

 UT4410 substitution

 UT4410 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.