UTT200N03 Todos los transistores

 

UTT200N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UTT200N03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 178 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 84 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 1220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: TO-220

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UTT200N03 Datasheet (PDF)

 ..1. Size:170K  utc
utt200n03.pdf

UTT200N03
UTT200N03

UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Preliminary Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET DESCRIPTION 1The UTC UTT200N03 is a N-channel MOSFET using UTCs advanced technology to provide customers with a minimum on-state TO-220resistance and superior switching performance. The UTC UTT200N03 is generally applied in DC to DC convertor or synchronous rectification

 6.1. Size:191K  utc
utt200n02.pdf

UTT200N03
UTT200N03

UNISONIC TECHNOLOGIES CO., LTD UTT200N02 Preliminary Power MOSFET 200 A, 20 V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT200N02 is an N-channel power MOSFET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT200N02 is generally applied in synchronous Rectification or DC to DC convertor.

 9.1. Size:192K  utc
utt20n10.pdf

UTT200N03
UTT200N03

UNISONIC TECHNOLOGIES CO., LTD UTT20N10 Power MOSFET 20A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT20N10 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC UT

 9.2. Size:122K  utc
utt20p04.pdf

UTT200N03
UTT200N03

UNISONIC TECHNOLOGIES CO., LTD UTT20P04 Preliminary Power MOSFET -40V, -20A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT20P04 is a P-channel Power MOSFET usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. FEATURES *RDS(ON)

 9.3. Size:148K  utc
utt20n06.pdf

UTT200N03
UTT200N03

UNISONIC TECHNOLOGIES CO., LTD UTT20N06 Power MOSFET 20A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT20N06 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC U

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