UTT200N03 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UTT200N03
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 178 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 200 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 1220 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
Тип корпуса: TO-220
- подбор MOSFET транзистора по параметрам
UTT200N03 Datasheet (PDF)
utt200n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Preliminary Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET DESCRIPTION 1The UTC UTT200N03 is a N-channel MOSFET using UTCs advanced technology to provide customers with a minimum on-state TO-220resistance and superior switching performance. The UTC UTT200N03 is generally applied in DC to DC convertor or synchronous rectification
utt200n02.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT200N02 Preliminary Power MOSFET 200 A, 20 V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT200N02 is an N-channel power MOSFET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT200N02 is generally applied in synchronous Rectification or DC to DC convertor.
utt20n10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT20N10 Power MOSFET 20A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT20N10 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC UT
utt20p04.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT20P04 Preliminary Power MOSFET -40V, -20A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT20P04 is a P-channel Power MOSFET usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. FEATURES *RDS(ON)
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: CED16N10L | BUK7Y19-100E | CEF30N3 | UT75N03 | HUF76409P3 | SWP9N25D | CEB85A3
History: CED16N10L | BUK7Y19-100E | CEF30N3 | UT75N03 | HUF76409P3 | SWP9N25D | CEB85A3



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