UTT36N05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT36N05
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 550 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET UTT36N05
UTT36N05 Datasheet (PDF)
utt36n05.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT36N05 Preliminary Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT36N05 is suitable for
utt36n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT36N10 Power MOSFET 36A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT36N10 is a N-channel mode power MOSFET using UTCs advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT36N10 is suitable for high voltage synchronous rectifier and DC/DC converters, et
utt36p03.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT36P03 Preliminary Power MOSFET -30V, -36A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT36P03 is a P-channel Power MOSFET, usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. The UTC UTT36P03 is suitable for low voltage
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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