All MOSFET. UTT36N05 Datasheet

 

UTT36N05 Datasheet and Replacement


   Type Designator: UTT36N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 550 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO-220
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UTT36N05 Datasheet (PDF)

 ..1. Size:171K  utc
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UTT36N05

UNISONIC TECHNOLOGIES CO., LTD UTT36N05 Preliminary Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT36N05 is suitable for

 8.1. Size:212K  utc
utt36n10.pdf pdf_icon

UTT36N05

UNISONIC TECHNOLOGIES CO., LTD UTT36N10 Power MOSFET 36A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT36N10 is a N-channel mode power MOSFET using UTCs advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT36N10 is suitable for high voltage synchronous rectifier and DC/DC converters, et

 9.1. Size:123K  utc
utt36p03.pdf pdf_icon

UTT36N05

UNISONIC TECHNOLOGIES CO., LTD UTT36P03 Preliminary Power MOSFET -30V, -36A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT36P03 is a P-channel Power MOSFET, usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. The UTC UTT36P03 is suitable for low voltage

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History: TK2P60D | DMP2104LP | IRFBG20

Keywords - UTT36N05 MOSFET datasheet

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