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K596 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: K596
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 1.5 V
   |Id|ⓘ - Corriente continua de drenaje: 0.001 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Paquete / Cubierta: TO-92SP
 

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K596 Datasheet (PDF)

 ..1. Size:70K  utc
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K596

UNISONIC TECHNOLOGIES CO., LTD K596 N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS FEATURES*Especially Suited for use in Audio, Telephone Capacitor Microphones *Excellent Voltage characteristic *Excellent Transient Characteristic *Pb-free plating product number: K596L ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2

 0.1. Size:313K  sanyo
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K596

2SK596SOrdering number : ENA0944SANYO SemiconductorsDATA SHEETN-channel Silicon Juncton FETElectret Condenser Microphone2SK596SApplicationsFeatures Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic

 0.2. Size:46K  fairchild semi
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K596

KSK596Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones Excellent Voltage Characteristic Excellent Transient CharacteristicTO-92S11.Source 2. Gate 3. DrainSi N-channel Junction FETAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVGDO Gate-Drain Voltage -20 VIG Gate Current

 0.3. Size:240K  onsemi
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K596

Ordering number : ENA09442SK596SN-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.0mS, SPAFeatures Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic Adoption of FBET processSpecificationsAbsolut

Otros transistores... UTT200N03 , UTT20N06 , UTT220N03 , UTT30N06 , UTT3205 , UTT36N05 , UTT40N03 , UTT80N05 , 8N60 , K1109 , TF202 , TF212 , TF215 , TF218 , K4059 , 2SK2751 , UJ0100 .

History: FQA13N80-F109 | HFU630 | AOCA32112E

 

 
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