Справочник MOSFET. K596

 

K596 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: K596
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.001 A
   Tjⓘ - Максимальная температура канала: 125 °C
   Тип корпуса: TO-92SP
     - подбор MOSFET транзистора по параметрам

 

K596 Datasheet (PDF)

 ..1. Size:70K  utc
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K596

UNISONIC TECHNOLOGIES CO., LTD K596 N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS FEATURES*Especially Suited for use in Audio, Telephone Capacitor Microphones *Excellent Voltage characteristic *Excellent Transient Characteristic *Pb-free plating product number: K596L ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2

 0.1. Size:313K  sanyo
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K596

2SK596SOrdering number : ENA0944SANYO SemiconductorsDATA SHEETN-channel Silicon Juncton FETElectret Condenser Microphone2SK596SApplicationsFeatures Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic

 0.2. Size:46K  fairchild semi
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K596

KSK596Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones Excellent Voltage Characteristic Excellent Transient CharacteristicTO-92S11.Source 2. Gate 3. DrainSi N-channel Junction FETAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVGDO Gate-Drain Voltage -20 VIG Gate Current

 0.3. Size:240K  onsemi
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K596

Ordering number : ENA09442SK596SN-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.0mS, SPAFeatures Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic Adoption of FBET processSpecificationsAbsolut

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK1425 | IXTT360N055T2 | WMK18N50C4 | IRF6218PBF | SRC60R029FBS | IXFK44N50 | KRF7401

 

 
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