K1109 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: K1109

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.08 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 1 V

|Id|ⓘ - Corriente continua de drenaje: 0.01 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: SOT-23 SOT-323

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K1109 datasheet

 ..1. Size:169K  utc
k1109.pdf pdf_icon

K1109

UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on Settling Time ORDERING INFORMATION Ordering Number Pin Assignment Package

 0.2. Size:44K  nec
2sk1109.pdf pdf_icon

K1109

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES Compact package 1. Source High forward transfer admittance 2. Drain 3. Gate 1000 S TYP. (IDSS = 100 A) 1 2 1600 S TYP. (IDSS = 200

 0.3. Size:10K  utc
2sk1109.pdf pdf_icon

K1109

UTC K1109 JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 1 2 DESCRIPTION The UTC K1109 is N-channel JFET for electret condenser microphone. 3 FEATURES *High gm implies low transfer loss *Built-in gate-source diode and resistor implies fast TOP VIEW power on settling time SOT-23 1 SOURCE 2 DRAIN 3 GATE ABSOLUTE MAXIMUM RATINGS ( Operating tem

Otros transistores... UTT20N06, UTT220N03, UTT30N06, UTT3205, UTT36N05, UTT40N03, UTT80N05, K596, AON7403, TF202, TF212, TF215, TF218, K4059, 2SK2751, UJ0100, 10NN15