Справочник MOSFET. K1109

 

K1109 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: K1109
   Тип транзистора: JFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.08 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 1 V
   Минимальное напряжение отсечки |Vgs(off)|: 0.1 V
   Максимально допустимый постоянный ток стока |Id|: 0.01 A
   Максимальная температура канала (Tj): 125 °C
   Тип корпуса: SOT-23 SOT-323

 Аналог (замена) для K1109

 

 

K1109 Datasheet (PDF)

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 k1109.pdf

K1109 K1109

UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on Settling Time ORDERING INFORMATION Ordering Number Pin Assignment Package

 0.1. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

K1109

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 2sk1109.pdf

K1109 K1109

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1109N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SK1109 is suitable for converter of ECM.0.8FEATURES Compact package1. Source High forward transfer admittance2. Drain3. Gate1000 S TYP. (IDSS = 100 A)1 21600 S TYP. (IDSS = 200

 0.3. Size:10K  utc
 2sk1109.pdf

K1109 K1109

UTC K1109 JUNCTION FIELD EFFECT TRANSISTORN-CHANNEL JFET FORELECTRET CONDENSERMICROPHONE1 2DESCRIPTION The UTC K1109 is N-channel JFET for electretcondenser microphone.3FEATURES*High gm implies low transfer loss*Built-in gate-source diode and resistor implies fastTOP VIEW power on settling timeSOT-23 1:SOURCE 2:DRAIN 3:GATEABSOLUTE MAXIMUM RATINGS ( Operating tem

 0.4. Size:977K  kexin
 2sk1109.pdf

K1109 K1109

SMD Type MOSFETN-Channel Junction Field Effect Transistors2SK1109SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 10m A1 2 High forward transfer admittance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.11000 s TYP. (IDSS = 100 A)1600 s TYP. (IDSS = 200 A) Includes diode and high resistance at G - S1. Drain2. So

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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