K1109 - описание и поиск аналогов

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 k1109.pdf 

UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on Settling Time ORDERING INFORMATION Ordering Number Pin Assignment Package

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 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf 

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 2sk1109.pdf 

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES Compact package 1. Source High forward transfer admittance 2. Drain 3. Gate 1000 S TYP. (IDSS = 100 A) 1 2 1600 S TYP. (IDSS = 200

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 2sk1109.pdf 

UTC K1109 JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 1 2 DESCRIPTION The UTC K1109 is N-channel JFET for electret condenser microphone. 3 FEATURES *High gm implies low transfer loss *Built-in gate-source diode and resistor implies fast TOP VIEW power on settling time SOT-23 1 SOURCE 2 DRAIN 3 GATE ABSOLUTE MAXIMUM RATINGS ( Operating tem

 0.4. Size:977K  kexin
 2sk1109.pdf 

SMD Type MOSFET N-Channel Junction Field Effect Transistors 2SK1109 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 10m A 1 2 High forward transfer admittance +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 1000 s TYP. (IDSS = 100 A) 1600 s TYP. (IDSS = 200 A) Includes diode and high resistance at G - S 1. Drain 2. So