K4059 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: K4059

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 1 V

|Id|ⓘ - Corriente continua de drenaje: 0.0005 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: SOT-723

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K4059 datasheet

 ..1. Size:130K  utc
 k4059.pdf pdf_icon

K4059

UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTC s advanced technology to provide customers with low input capacitance and low forward transfer admittance. FEATURES * Low forward transfer admittance * Low input capacitance EQUIVAL

 0.1. Size:147K  toshiba
 2sk4059tv.pdf pdf_icon

K4059

2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Stora

 0.2. Size:332K  toshiba
 2sk4059tk.pdf pdf_icon

K4059

2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit mm Application for compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 Characteristic Symbol Rating Unit 3 Gate-Drain voltage VGDO -20 V 2 Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Storage temp

Otros transistores... UTT40N03, UTT80N05, K596, K1109, TF202, TF212, TF215, TF218, AOD4184A, 2SK2751, UJ0100, 10NN15, 12NN10, 2N7002ZDW, UD9926, UM6K1N, UP9971