All MOSFET. K4059 Datasheet

 

K4059 Datasheet and Replacement


   Type Designator: K4059
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 0.0005 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Package: SOT-723
 

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K4059 Datasheet (PDF)

 ..1. Size:130K  utc
k4059.pdf pdf_icon

K4059

UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTCs advancedtechnology to provide customers with low input capacitance and lowforward transfer admittance. FEATURES * Low forward transfer admittance * Low input capacitance EQUIVAL

 0.1. Size:147K  toshiba
2sk4059tv.pdf pdf_icon

K4059

2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 123Characteristic Symbol Rating UnitGate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Stora

 0.2. Size:332K  toshiba
2sk4059tk.pdf pdf_icon

K4059

2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Application for compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 1Characteristic Symbol Rating Unit3Gate-Drain voltage VGDO -20 V2Gate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Storage temp

Datasheet: UTT40N03 , UTT80N05 , K596 , K1109 , TF202 , TF212 , TF215 , TF218 , HY1906P , 2SK2751 , UJ0100 , 10NN15 , 12NN10 , 2N7002ZDW , UD9926 , UM6K1N , UP9971 .

History: NVBF170L

Keywords - K4059 MOSFET datasheet

 K4059 cross reference
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