K4059 Specs and Replacement

Type Designator: K4059

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 1 V

|Id| ⓘ - Maximum Drain Current: 0.0005 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

Package: SOT-723

K4059 substitution

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K4059 datasheet

 ..1. Size:130K  utc
 k4059.pdf pdf_icon

K4059

UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTC s advanced technology to provide customers with low input capacitance and low forward transfer admittance. FEATURES * Low forward transfer admittance * Low input capacitance EQUIVAL... See More ⇒

 0.1. Size:147K  toshiba
 2sk4059tv.pdf pdf_icon

K4059

2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Stora... See More ⇒

 0.2. Size:332K  toshiba
 2sk4059tk.pdf pdf_icon

K4059

2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit mm Application for compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 Characteristic Symbol Rating Unit 3 Gate-Drain voltage VGDO -20 V 2 Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Storage temp... See More ⇒

Detailed specifications: UTT40N03, UTT80N05, K596, K1109, TF202, TF212, TF215, TF218, AOD4184A, 2SK2751, UJ0100, 10NN15, 12NN10, 2N7002ZDW, UD9926, UM6K1N, UP9971

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