MTA06N03J3 Todos los transistores

 

MTA06N03J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTA06N03J3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
   Paquete / Cubierta: TO-252

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MTA06N03J3 Datasheet (PDF)

 ..1. Size:268K  cystek
mta06n03j3.pdf

MTA06N03J3
MTA06N03J3

Spec. No. : C442J3 Issued Date : 2009.03.06 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 25VID 80AMTA06N03J3 RDS(ON) 6m Features 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS c

 6.1. Size:297K  cystek
mta06n03nj3.pdf

MTA06N03J3
MTA06N03J3

Spec. No. : C442J3 Issued Date : 2009.03.02 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 25VID 80AMTA06N03NJ3 RDS(ON) 6m Features 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS

 9.1. Size:46K  diodes
fmmta05 fmmta06.pdf

MTA06N03J3

SOT SI I O A A TA0 DI O T A SISTO S TA06ISS 6 T 8 V I V i I T I D T I T T T T SOT A SO T A I ATI S T T T IT II V I V 8 V II i V I V 8 V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T IT DITI I I II i V 8 V I V I i V V I V I II I V V II I V V V 8 V i I V V T i I V V II i V V

 9.2. Size:92K  diodes
fmmta06.pdf

MTA06N03J3
MTA06N03J3

FMMTA06SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORSSUMMARYV(BR)CEO > 80VIC(cont) = 500mADESCRIPTION80V medium power NPN transistor in a compact SOT23packageFEATURESSOT23 80V VCEO Compact SOT23 packageSYMBOL HFE 50 @ IC = 100mAAPPLICATIONS Low power motor driving circuitsORDERING INFORMATIONDEVICE REEL TAPE WIDTH QUANTITY PERPINOUTSIZE REEL

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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