MTB02N03J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTB02N03J3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 93 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 136 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 82 nS
   Cossⓘ - Capacitancia de salida: 898 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
   Paquete / Cubierta: TO-252

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MTB02N03J3 Datasheet (PDF)

..1. Size:279K cystek
mtb02n03j3.pdf

Spec. No. : C575J3 Issued Date : 2012.01.03 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB02N03J3 ID 136ARDS(ON)@VGS=10V, ID=45A 2.7m(typ) RDS(ON)@VGS=4.5V, ID=36A 3.8m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS com

6.1. Size:331K cystek
mtb02n03h8.pdf

Spec. No. : C575H8 Issued Date : 2012.05.09 CYStech Electronics Corp.Revised Date :2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB02N03H8ID 75ARDS(ON)@VGS=10V, ID=30A 2.6 m(typ)RDS(ON)@VGS=4.5V, ID=25A 3.5 m(typ)Description The MTB02N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin

6.2. Size:311K cystek
mtb02n03q8.pdf

Spec. No. : C575Q8 Issued Date : 2012.01.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB02N03Q8ID 25ARDSON@VGS=10V, ID=25A 2.2m(typ) RDSON@VGS=4.5V, ID=15A 2.3m(typ) Description The MTB02N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

9.1. Size:478K cystek
mtb028n10qncq8.pdf

Spec. No. : C168Q8 Issued Date : 2016.11.18 CYStech Electronics Corp. Revised Date : 2016.11.22 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB028N10QNCQ8 BVDSS 100VID @ TA=25C, VGS=10V 6.6A RDS(ON)@VGS=10V, ID=4A 19.3 m(typ)Features RDS(ON)@VGS=4.5V, ID=3A 27.0m(typ) Single Drive Requirement Low On-resistance Fast Switching Characterist

Otros transistores... MTA17A02CDV8 , MTA25N02J3 , MTA340N02N3 , MTA55N02N3 , MTA65N15H8 , MTA65N20H8 , MTA90N03ZN3 , MTB02N03H8 , 5N65 , MTB02N03Q8 , MTB030N04N3 , MTB032P06V8 , MTB03N03H8 , MTB04N03AQ8 , MTB04N03E3 , MTB04N03H8 , MTB04N03J3 .

History: IXFT21N50

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