MTB060N06I3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTB060N06I3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 20 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 16 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.4 V
   Carga de la puerta (Qg): 11 nC
   Tiempo de subida (tr): 5.2 nS
   Conductancia de drenaje-sustrato (Cd): 56 pF
   Resistencia entre drenaje y fuente RDS(on): 0.035 Ohm
   Paquete / Cubierta: TO-251

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MTB060N06I3 Datasheet (PDF)

..1. Size:316K cystek
mtb060n06i3.pdf

Spec. No. : C708I3 Issued Date : 2014.04.30 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB060N06I3 ID 16ARDSON(MAX)@VGS=10V, ID=10A 35m(typ.) RDSON(MAX)@VGS=5V, ID=8A 40m(typ.) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Cir

7.1. Size:365K cystek
mtb060n15j3.pdf

Spec. No. : C970J3 Issued Date : 2014.06.14 CYStech Electronics Corp.Revised Date : 2014.06.16 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150VMTB060N15J3 ID @VGS=10V 16ARDS(ON)@VGS=10V, ID=4A 59m(typ) RDS(ON)@VGS=4.5V, ID=2A 60m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package E

9.1. Size:292K cystek
mtb06n03j3.pdf

Spec. No. : C441J3 Issued Date : 2009.03.02 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03J3 ID 75ARDS(ON)@VGS=10V, ID=30A 4.5m(typ) RDS(ON)@VGS=5V, ID=24A 7.3m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS complia

9.2. Size:281K cystek
mtb06n03e3.pdf

Spec. No. : C441E3 Issued Date : 2010.08.13 CYStech Electronics Corp.Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03E3 ID 102A4.3m VGS=10V, ID=30A RDSON(TYP) 6.6m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating

9.3. Size:334K cystek
mtb06n03h8.pdf

Spec. No. : C710H8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.07.31 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03H8ID 75ARDSON(max) 6m Description The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

9.4. Size:328K cystek
mtb06n03v8.pdf

Spec. No. : C441V8 Issued Date : 2010.10.05 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03V8ID 44A4.5m VGS=10V, ID=14A RDSON(TYP) 6.4m VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rat

9.5. Size:309K cystek
mtb06n03q8.pdf

Spec. No. : C441Q8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.08.06 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03Q8ID 23ARDSON@VGS=10V, ID=18A 4.6m(typ)RDSON@VGS=4.5V, ID=12A 6.5m(typ)Description The MTB06N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination

9.6. Size:265K cystek
mtb06n03i3.pdf

Spec. No. : C441I3 Issued Date : 2012.02.13 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03I3 ID 75ARDS(ON)@VGS=10V, ID=30A 4.5m(typ) RDS(ON)@VGS=5V, ID=24A 7.3m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package

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