MTB060N06I3 Todos los transistores

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 mtb060n06i3.pdf

Spec. No. C708I3 Issued Date 2014.04.30 CYStech Electronics Corp. Revised Date Page No. 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60V MTB060N06I3 ID 16A RDSON(MAX)@VGS=10V, ID=10A 35m (typ.) RDSON(MAX)@VGS=5V, ID=8A 40m (typ.) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Cir

 7.1. Size:365K  cystek
 mtb060n15j3.pdf

Spec. No. C970J3 Issued Date 2014.06.14 CYStech Electronics Corp. Revised Date 2014.06.16 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB060N15J3 ID @VGS=10V 16A RDS(ON)@VGS=10V, ID=4A 59m (typ) RDS(ON)@VGS=4.5V, ID=2A 60m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package E

 9.1. Size:292K  cystek
 mtb06n03j3.pdf

Spec. No. C441J3 Issued Date 2009.03.02 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB06N03J3 ID 75A RDS(ON)@VGS=10V, ID=30A 4.5m (typ) RDS(ON)@VGS=5V, ID=24A 7.3m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS complia

 9.2. Size:281K  cystek
 mtb06n03e3.pdf

Spec. No. C441E3 Issued Date 2010.08.13 CYStech Electronics Corp. Revised Date 2013.02.26 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB06N03E3 ID 102A 4.3m VGS=10V, ID=30A RDSON(TYP) 6.6m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating

 9.3. Size:334K  cystek
 mtb06n03h8.pdf

Spec. No. C710H8 Issued Date 2009.05.07 CYStech Electronics Corp. Revised Date 2012.07.31 Page No. 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB06N03H8 ID 75A RDSON(max) 6m Description The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 9.4. Size:328K  cystek
 mtb06n03v8.pdf

Spec. No. C441V8 Issued Date 2010.10.05 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB06N03V8 ID 44A 4.5m VGS=10V, ID=14A RDSON(TYP) 6.4m VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rat

 9.5. Size:309K  cystek
 mtb06n03q8.pdf

Spec. No. C441Q8 Issued Date 2009.05.07 CYStech Electronics Corp. Revised Date 2012.08.06 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB06N03Q8 ID 23A RDSON@VGS=10V, ID=18A 4.6m (typ) RDSON@VGS=4.5V, ID=12A 6.5m (typ) Description The MTB06N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination

 9.6. Size:265K  cystek
 mtb06n03i3.pdf

Spec. No. C441I3 Issued Date 2012.02.13 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB06N03I3 ID 75A RDS(ON)@VGS=10V, ID=30A 4.5m (typ) RDS(ON)@VGS=5V, ID=24A 7.3m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package