MTB060N06I3 Specs and Replacement

Type Designator: MTB060N06I3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO-251

MTB060N06I3 substitution

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MTB060N06I3 datasheet

 ..1. Size:316K  cystek
 mtb060n06i3.pdf pdf_icon

MTB060N06I3

Spec. No. C708I3 Issued Date 2014.04.30 CYStech Electronics Corp. Revised Date Page No. 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60V MTB060N06I3 ID 16A RDSON(MAX)@VGS=10V, ID=10A 35m (typ.) RDSON(MAX)@VGS=5V, ID=8A 40m (typ.) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Cir... See More ⇒

 7.1. Size:365K  cystek
 mtb060n15j3.pdf pdf_icon

MTB060N06I3

Spec. No. C970J3 Issued Date 2014.06.14 CYStech Electronics Corp. Revised Date 2014.06.16 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB060N15J3 ID @VGS=10V 16A RDS(ON)@VGS=10V, ID=4A 59m (typ) RDS(ON)@VGS=4.5V, ID=2A 60m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package E... See More ⇒

 9.1. Size:292K  cystek
 mtb06n03j3.pdf pdf_icon

MTB060N06I3

Spec. No. C441J3 Issued Date 2009.03.02 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB06N03J3 ID 75A RDS(ON)@VGS=10V, ID=30A 4.5m (typ) RDS(ON)@VGS=5V, ID=24A 7.3m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS complia... See More ⇒

 9.2. Size:281K  cystek
 mtb06n03e3.pdf pdf_icon

MTB060N06I3

Spec. No. C441E3 Issued Date 2010.08.13 CYStech Electronics Corp. Revised Date 2013.02.26 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB06N03E3 ID 102A 4.3m VGS=10V, ID=30A RDSON(TYP) 6.6m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating... See More ⇒

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Detailed specifications: MTB04N03E3, MTB04N03H8, MTB04N03J3, MTB04N03Q8, MTB050N15J3, MTB050P10E3, MTB050P10F3, MTB05N03HQ8, IRFP460, MTB060N15J3, MTB06N03E3, MTB06N03H8, MTB06N03I3, MTB06N03J3, MTB06N03Q8, MTB06N03V8, MTB070N11J3

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