MTB06N03E3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB06N03E3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 94 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 102 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 241 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm

Encapsulados: TO-220AB

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MTB06N03E3 datasheet

 ..1. Size:281K  cystek
 mtb06n03e3.pdf pdf_icon

MTB06N03E3

Spec. No. C441E3 Issued Date 2010.08.13 CYStech Electronics Corp. Revised Date 2013.02.26 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB06N03E3 ID 102A 4.3m VGS=10V, ID=30A RDSON(TYP) 6.6m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating

 6.1. Size:292K  cystek
 mtb06n03j3.pdf pdf_icon

MTB06N03E3

Spec. No. C441J3 Issued Date 2009.03.02 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB06N03J3 ID 75A RDS(ON)@VGS=10V, ID=30A 4.5m (typ) RDS(ON)@VGS=5V, ID=24A 7.3m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS complia

 6.2. Size:334K  cystek
 mtb06n03h8.pdf pdf_icon

MTB06N03E3

Spec. No. C710H8 Issued Date 2009.05.07 CYStech Electronics Corp. Revised Date 2012.07.31 Page No. 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB06N03H8 ID 75A RDSON(max) 6m Description The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 6.3. Size:328K  cystek
 mtb06n03v8.pdf pdf_icon

MTB06N03E3

Spec. No. C441V8 Issued Date 2010.10.05 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB06N03V8 ID 44A 4.5m VGS=10V, ID=14A RDSON(TYP) 6.4m VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rat

MOSTRAR MÁS

Otros transistores... MTB04N03J3, MTB04N03Q8, MTB050N15J3, MTB050P10E3, MTB050P10F3, MTB05N03HQ8, MTB060N06I3, MTB060N15J3, IRF640, MTB06N03H8, MTB06N03I3, MTB06N03J3, MTB06N03Q8, MTB06N03V8, MTB070N11J3, MTB08N04J3, MTB090N06I3