Справочник MOSFET. MTB06N03E3

 

MTB06N03E3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTB06N03E3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 94 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 102 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 53 nC
   trⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 241 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0043 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для MTB06N03E3

 

 

MTB06N03E3 Datasheet (PDF)

 ..1. Size:281K  cystek
 mtb06n03e3.pdf

MTB06N03E3 MTB06N03E3

Spec. No. : C441E3 Issued Date : 2010.08.13 CYStech Electronics Corp.Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03E3 ID 102A4.3m VGS=10V, ID=30A RDSON(TYP) 6.6m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating

 6.1. Size:292K  cystek
 mtb06n03j3.pdf

MTB06N03E3 MTB06N03E3

Spec. No. : C441J3 Issued Date : 2009.03.02 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03J3 ID 75ARDS(ON)@VGS=10V, ID=30A 4.5m(typ) RDS(ON)@VGS=5V, ID=24A 7.3m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS complia

 6.2. Size:334K  cystek
 mtb06n03h8.pdf

MTB06N03E3 MTB06N03E3

Spec. No. : C710H8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.07.31 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03H8ID 75ARDSON(max) 6m Description The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 6.3. Size:328K  cystek
 mtb06n03v8.pdf

MTB06N03E3 MTB06N03E3

Spec. No. : C441V8 Issued Date : 2010.10.05 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03V8ID 44A4.5m VGS=10V, ID=14A RDSON(TYP) 6.4m VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rat

 6.4. Size:309K  cystek
 mtb06n03q8.pdf

MTB06N03E3 MTB06N03E3

Spec. No. : C441Q8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.08.06 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03Q8ID 23ARDSON@VGS=10V, ID=18A 4.6m(typ)RDSON@VGS=4.5V, ID=12A 6.5m(typ)Description The MTB06N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination

 6.5. Size:265K  cystek
 mtb06n03i3.pdf

MTB06N03E3 MTB06N03E3

Spec. No. : C441I3 Issued Date : 2012.02.13 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03I3 ID 75ARDS(ON)@VGS=10V, ID=30A 4.5m(typ) RDS(ON)@VGS=5V, ID=24A 7.3m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package

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