MTB06N03Q8 Todos los transistores

 

MTB06N03Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTB06N03Q8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 308 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: SOP-8
 

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MTB06N03Q8 Datasheet (PDF)

 ..1. Size:309K  cystek
 mtb06n03q8.pdf pdf_icon

MTB06N03Q8

Spec. No. : C441Q8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.08.06 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03Q8ID 23ARDSON@VGS=10V, ID=18A 4.6m(typ)RDSON@VGS=4.5V, ID=12A 6.5m(typ)Description The MTB06N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination

 6.1. Size:292K  cystek
 mtb06n03j3.pdf pdf_icon

MTB06N03Q8

Spec. No. : C441J3 Issued Date : 2009.03.02 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03J3 ID 75ARDS(ON)@VGS=10V, ID=30A 4.5m(typ) RDS(ON)@VGS=5V, ID=24A 7.3m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS complia

 6.2. Size:281K  cystek
 mtb06n03e3.pdf pdf_icon

MTB06N03Q8

Spec. No. : C441E3 Issued Date : 2010.08.13 CYStech Electronics Corp.Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03E3 ID 102A4.3m VGS=10V, ID=30A RDSON(TYP) 6.6m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating

 6.3. Size:334K  cystek
 mtb06n03h8.pdf pdf_icon

MTB06N03Q8

Spec. No. : C710H8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.07.31 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03H8ID 75ARDSON(max) 6m Description The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

MOSTRAR MÁS

Otros transistores... MTB050P10F3 , MTB05N03HQ8 , MTB060N06I3 , MTB060N15J3 , MTB06N03E3 , MTB06N03H8 , MTB06N03I3 , MTB06N03J3 , IRF630 , MTB06N03V8 , MTB070N11J3 , MTB08N04J3 , MTB090N06I3 , MTB090N06N3 , MTB09N03H8 , MTB09N03V8 , MTB09N04H8 .

History: RU60C20R5 | IRFR1N60A | TMA12N65H | IRFR9120 | RU60E16R

 

 
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