MTB09N03V8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB09N03V8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 37.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 61 nS

Cossⓘ - Capacitancia de salida: 176 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm

Encapsulados: DFN3X3

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MTB09N03V8 datasheet

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 mtb09n03v8.pdf pdf_icon

MTB09N03V8

Spec. No. C709V8 Issued Date 2012.08.20 CYStech Electronics Corp. Revised Date 2012.08.23 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB09N03V8 ID 37.5A 6.8m VGS=10V, ID=12A RDSON(TYP) 13.1m VGS=4.5V, ID=8A Description The MTB09N03V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination o

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 mtb09n03h8.pdf pdf_icon

MTB09N03V8

Spec. No. C709H8 Issued Date 2009.05.07 CYStech Electronics Corp. Revised Date 2012.11.12 Page No. 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB09N03H8 ID 56A RDS(ON)@VGS=10V, ID=25A 7 m (typ) RDS(ON)@VGS=4.5V, ID=20A 13 m (typ) Description The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin

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 mtb09n06j3.pdf pdf_icon

MTB09N03V8

Spec. No. C912J3 Issued Date 2013.07.24 CYStech Electronics Corp. Revised Date 2014.07.24 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m (typ) RDS(ON)@VGS=4.5V, ID=20A 9 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi

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 mtb09n04h8.pdf pdf_icon

MTB09N03V8

Spec. No. C892H8 Issued Date 2013.02.01 CYStech Electronics Corp. Revised Date Page No. 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 40V MTB09N04H8 ID 60A 6m VGS=10V, ID=10A RDSON(TYP) 10m VGS=4.5V, ID=8A Description The MTB09N04H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching

MOSTRAR MÁS

Otros transistores... MTB06N03J3, MTB06N03Q8, MTB06N03V8, MTB070N11J3, MTB08N04J3, MTB090N06I3, MTB090N06N3, MTB09N03H8, IRFB4115, MTB09N04H8, MTB09N06J3, MTB09N06Q8, MTB09P03J3, MTB110P10E3, MTB110P10F3, MTB110P10J3, MTB11N03Q8