MTB09P03J3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB09P03J3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 93 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 486 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO-252

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MTB09P03J3 datasheet

 ..1. Size:278K  cystek
 mtb09p03j3.pdf pdf_icon

MTB09P03J3

Spec. No. C808J3 Issued Date 2010.01.18 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTB09P03J3 ID -75A 8m (typ.) RDSON@VGS=-10V, ID=-25A 11m (typ.) Features RDSON@VGS=-4.5V, ID=-10A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag

 6.1. Size:340K  cystek
 mtb09p03e3.pdf pdf_icon

MTB09P03J3

Spec. No. C808E3 Issued Date 2014.12.22 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTB09P03E3 ID @ VGS=-10V, TC=25 C -75A ID @ VGS=-10V, TA=25 C -11.6A 6.7m RDSON(TYP) @ VGS=-10V, ID=-25A RDSON(TYP) @ VGS=-4.5V, ID=-10A 10.2m Features Low Gate Charge Simple Drive Requirement

 7.1. Size:368K  cystek
 mtb09p04dj3.pdf pdf_icon

MTB09P03J3

Spec. No. C877J3 Issued Date 2014.12.25 CYStech Electronics Corp. Revised Date 2014.12.26 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -40V MTB09P04DJ3 ID@VGS=-10V, TC=25 C -50A ID@VGS=-10V, TA=25 C -13.7A RDS(ON)@VGS=-10V, ID=-25A 5.2m (typ) RDS(ON)@VGS=-4.5V, ID=-15A 6.9m (typ) Features Single Drive Requirement Low On-resistance

 9.1. Size:589K  cystek
 mtb09n06j3.pdf pdf_icon

MTB09P03J3

Spec. No. C912J3 Issued Date 2013.07.24 CYStech Electronics Corp. Revised Date 2014.07.24 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m (typ) RDS(ON)@VGS=4.5V, ID=20A 9 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi

MOSTRAR MÁS

Otros transistores... MTB08N04J3, MTB090N06I3, MTB090N06N3, MTB09N03H8, MTB09N03V8, MTB09N04H8, MTB09N06J3, MTB09N06Q8, 7N65, MTB110P10E3, MTB110P10F3, MTB110P10J3, MTB11N03Q8, MTB12N03J3, MTB12N03Q8, MTB12N04J3, MTB12P04J3