All MOSFET. MTB09P03J3 Datasheet

 

MTB09P03J3 Datasheet and Replacement


   Type Designator: MTB09P03J3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 486 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-252
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MTB09P03J3 Datasheet (PDF)

 ..1. Size:278K  cystek
 mtb09p03j3.pdf pdf_icon

MTB09P03J3

Spec. No. : C808J3 Issued Date : 2010.01.18 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30VMTB09P03J3 ID -75A8m(typ.) RDSON@VGS=-10V, ID=-25A 11m(typ.)Features RDSON@VGS=-4.5V, ID=-10A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag

 6.1. Size:340K  cystek
 mtb09p03e3.pdf pdf_icon

MTB09P03J3

Spec. No. : C808E3 Issued Date : 2014.12.22 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTB09P03E3 ID @ VGS=-10V, TC=25C -75A ID @ VGS=-10V, TA=25C -11.6A 6.7m RDSON(TYP) @ VGS=-10V, ID=-25A RDSON(TYP) @ VGS=-4.5V, ID=-10A 10.2m Features Low Gate Charge Simple Drive Requirement

 7.1. Size:368K  cystek
 mtb09p04dj3.pdf pdf_icon

MTB09P03J3

Spec. No. : C877J3 Issued Date : 2014.12.25 CYStech Electronics Corp.Revised Date : 2014.12.26 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB09P04DJ3 ID@VGS=-10V, TC=25C -50A ID@VGS=-10V, TA=25C -13.7A RDS(ON)@VGS=-10V, ID=-25A 5.2m(typ) RDS(ON)@VGS=-4.5V, ID=-15A 6.9m(typ) Features Single Drive Requirement Low On-resistance

 9.1. Size:589K  cystek
 mtb09n06j3.pdf pdf_icon

MTB09P03J3

Spec. No. : C912J3 Issued Date : 2013.07.24 CYStech Electronics Corp. Revised Date : 2014.07.24 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m(typ) RDS(ON)@VGS=4.5V, ID=20A 9 m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi

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Keywords - MTB09P03J3 MOSFET datasheet

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