MTB09P03J3 Specs and Replacement

Type Designator: MTB09P03J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 486 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-252

MTB09P03J3 substitution

- MOSFET ⓘ Cross-Reference Search

 

MTB09P03J3 datasheet

 ..1. Size:278K  cystek
 mtb09p03j3.pdf pdf_icon

MTB09P03J3

Spec. No. C808J3 Issued Date 2010.01.18 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTB09P03J3 ID -75A 8m (typ.) RDSON@VGS=-10V, ID=-25A 11m (typ.) Features RDSON@VGS=-4.5V, ID=-10A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag... See More ⇒

 6.1. Size:340K  cystek
 mtb09p03e3.pdf pdf_icon

MTB09P03J3

Spec. No. C808E3 Issued Date 2014.12.22 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTB09P03E3 ID @ VGS=-10V, TC=25 C -75A ID @ VGS=-10V, TA=25 C -11.6A 6.7m RDSON(TYP) @ VGS=-10V, ID=-25A RDSON(TYP) @ VGS=-4.5V, ID=-10A 10.2m Features Low Gate Charge Simple Drive Requirement ... See More ⇒

 7.1. Size:368K  cystek
 mtb09p04dj3.pdf pdf_icon

MTB09P03J3

Spec. No. C877J3 Issued Date 2014.12.25 CYStech Electronics Corp. Revised Date 2014.12.26 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -40V MTB09P04DJ3 ID@VGS=-10V, TC=25 C -50A ID@VGS=-10V, TA=25 C -13.7A RDS(ON)@VGS=-10V, ID=-25A 5.2m (typ) RDS(ON)@VGS=-4.5V, ID=-15A 6.9m (typ) Features Single Drive Requirement Low On-resistance ... See More ⇒

 9.1. Size:589K  cystek
 mtb09n06j3.pdf pdf_icon

MTB09P03J3

Spec. No. C912J3 Issued Date 2013.07.24 CYStech Electronics Corp. Revised Date 2014.07.24 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m (typ) RDS(ON)@VGS=4.5V, ID=20A 9 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi... See More ⇒

SHOW MORE

Detailed specifications: MTB08N04J3, MTB090N06I3, MTB090N06N3, MTB09N03H8, MTB09N03V8, MTB09N04H8, MTB09N06J3, MTB09N06Q8, 7N65, MTB110P10E3, MTB110P10F3, MTB110P10J3, MTB11N03Q8, MTB12N03J3, MTB12N03Q8, MTB12N04J3, MTB12P04J3

Keywords - MTB09P03J3 MOSFET specs

 MTB09P03J3 cross reference

 MTB09P03J3 equivalent finder

 MTB09P03J3 pdf lookup

 MTB09P03J3 substitution

 MTB09P03J3 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs