MTB11N03Q8 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MTB11N03Q8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB11N03Q8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.3 nS

Cossⓘ - Capacitancia de salida: 176 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm

Encapsulados: SOP-8

Búsqueda de reemplazo de MTB11N03Q8 MOSFET

- Selecciónⓘ de transistores por parámetros

MTB11N03Q8 datasheet

..1. Size:304K cystek
mtb11n03q8.pdf pdf_icon

Spec. No. C711Q8 Issued Date 2009.05.07 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB11N03Q8 ID 16A RDSON(max) 8.5m Description The MTB11N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

..2. Size:823K cn vbsemi
mtb11n03q8.pdf pdf_icon

MTB11N03Q8 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

9.1. Size:595K cystek
mtb110p10j3.pdf pdf_icon

Spec. No. C968J3 Issued Date 2014.08.07 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTB110P10J3 ID -14A RDS(ON)@VGS=-10V, ID=-4.5A 79m (typ) RDS(ON)@VGS=-4.5V, ID=-4A 90m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package

9.2. Size:345K cystek
mtb110p10l3.pdf pdf_icon

Spec. No. C968L3 Issued Date 2014.12.23 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10L3 ID@VGS=-10V, TA=25 C -3.8A ID@VGS=-10V, TC=25 C -10.8A 85m (typ.) RDSON@VGS=-10V, ID=-4.5A Features 96m (typ.) RDSON@VGS=-4.5V, ID=-4A Simple Drive Requirement Low On-resistance F

Otros transistores... MTB09N03V8, MTB09N04H8, MTB09N06J3, MTB09N06Q8, MTB09P03J3, MTB110P10E3, MTB110P10F3, MTB110P10J3, AON7408, MTB12N03J3, MTB12N03Q8, MTB12N04J3, MTB12P04J3, MTB12P06J3, MTB13N03Q8, MTB14A03V8, MTB14P03Q8

MTB11N03Q8 Todos los transistores