MTB11N03Q8 Specs and Replacement

Type Designator: MTB11N03Q8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.3 nS

Cossⓘ - Output Capacitance: 176 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm

Package: SOP-8

MTB11N03Q8 substitution

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MTB11N03Q8 datasheet

 ..1. Size:304K  cystek
 mtb11n03q8.pdf pdf_icon

MTB11N03Q8

Spec. No. C711Q8 Issued Date 2009.05.07 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB11N03Q8 ID 16A RDSON(max) 8.5m Description The MTB11N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-... See More ⇒

 ..2. Size:823K  cn vbsemi
 mtb11n03q8.pdf pdf_icon

MTB11N03Q8

MTB11N03Q8 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒

 9.1. Size:595K  cystek
 mtb110p10j3.pdf pdf_icon

MTB11N03Q8

Spec. No. C968J3 Issued Date 2014.08.07 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTB110P10J3 ID -14A RDS(ON)@VGS=-10V, ID=-4.5A 79m (typ) RDS(ON)@VGS=-4.5V, ID=-4A 90m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package ... See More ⇒

 9.2. Size:345K  cystek
 mtb110p10l3.pdf pdf_icon

MTB11N03Q8

Spec. No. C968L3 Issued Date 2014.12.23 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10L3 ID@VGS=-10V, TA=25 C -3.8A ID@VGS=-10V, TC=25 C -10.8A 85m (typ.) RDSON@VGS=-10V, ID=-4.5A Features 96m (typ.) RDSON@VGS=-4.5V, ID=-4A Simple Drive Requirement Low On-resistance F... See More ⇒

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Detailed specifications: MTB09N03V8, MTB09N04H8, MTB09N06J3, MTB09N06Q8, MTB09P03J3, MTB110P10E3, MTB110P10F3, MTB110P10J3, AON7408, MTB12N03J3, MTB12N03Q8, MTB12N04J3, MTB12P04J3, MTB12P06J3, MTB13N03Q8, MTB14A03V8, MTB14P03Q8

Keywords - MTB11N03Q8 MOSFET specs

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