All MOSFET. MTB11N03Q8 Datasheet

 

MTB11N03Q8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB11N03Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 176 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: SOP-8

 MTB11N03Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB11N03Q8 Datasheet (PDF)

 ..1. Size:304K  cystek
 mtb11n03q8.pdf

MTB11N03Q8 MTB11N03Q8

Spec. No. : C711Q8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date :2012.03.26 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB11N03Q8ID 16ARDSON(max) 8.5m Description The MTB11N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 ..2. Size:823K  cn vbsemi
 mtb11n03q8.pdf

MTB11N03Q8 MTB11N03Q8

MTB11N03Q8www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 9.1. Size:595K  cystek
 mtb110p10j3.pdf

MTB11N03Q8 MTB11N03Q8

Spec. No. : C968J3 Issued Date : 2014.08.07 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTB110P10J3 ID -14A RDS(ON)@VGS=-10V, ID=-4.5A 79m(typ) RDS(ON)@VGS=-4.5V, ID=-4A 90m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package

 9.2. Size:345K  cystek
 mtb110p10l3.pdf

MTB11N03Q8 MTB11N03Q8

Spec. No. : C968L3 Issued Date : 2014.12.23 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100VMTB110P10L3 ID@VGS=-10V, TA=25C -3.8A ID@VGS=-10V, TC=25C -10.8A 85m (typ.)RDSON@VGS=-10V, ID=-4.5A Features 96m (typ.)RDSON@VGS=-4.5V, ID=-4A Simple Drive Requirement Low On-resistance F

 9.3. Size:525K  cystek
 mtb110p10f3.pdf

MTB11N03Q8 MTB11N03Q8

Spec. No. : C968F3 Issued Date : 2014.08.05 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10F3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80m RDSON(TYP) @ VGS=-4.5V, ID=-8A 93m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 9.4. Size:518K  cystek
 mtb110p10e3.pdf

MTB11N03Q8 MTB11N03Q8

Spec. No. : C968E3 Issued Date : 2014.08.04 CYStech Electronics Corp. Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10E3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80m RDSON(TYP) @ VGS=-4.5V, ID=-8A 93m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

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