MTB12N03Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTB12N03Q8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0097 Ohm
   Paquete / Cubierta: SOP-8

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MTB12N03Q8 Datasheet (PDF)

..1. Size:319K cystek
mtb12n03q8.pdf

Spec. No. : C730Q8 Issued Date : 2009.07.02 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB12N03Q8ID 12ARDSON(max) 11.5m Description The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

6.1. Size:280K cystek
mtb12n03j3.pdf

Spec. No. : C730J3 Issued Date : 2011.03.04 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB12N03J3ID 40A8.5m(typ.) RDSON@VGS=10V, ID=15A 13.5m(typ.) RDSON@VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynam

7.1. Size:295K cystek
mtb12n04j3.pdf

Spec. No. : C450J3 Issued Date : 2009.03.13 CYStech Electronics Corp.Revised Date :2010.05.17 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 40VID 30AMTB12N04J3 RDS(ON) 12m Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package & Halogen-free package Symbol Outline MTB12N0

9.1. Size:393K cystek
mtb12p06j3.pdf

Spec. No. : C584J3 Issued Date : 2014.07.20 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB12P06J3 ID -70ARDS(ON)@VGS=-10V, ID=-20A 10.2m(typ) RDS(ON)@VGS=-4.5V, ID=-20A 11.9m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package

9.2. Size:336K cystek
mtb12p04j3.pdf

Spec. No. : C734J3 Issued Date : 2009.07.09 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -40VMTB12P04J3 ID -25A12.6m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTB12P04J3 TO-252 GGate D

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