MTB12N03Q8. Аналоги и основные параметры

Наименование производителя: MTB12N03Q8

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 190 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0097 Ohm

Тип корпуса: SOP-8

Аналог (замена) для MTB12N03Q8

- подборⓘ MOSFET транзистора по параметрам

 

MTB12N03Q8 даташит

 ..1. Size:319K  cystek
 mtb12n03q8.pdf pdf_icon

MTB12N03Q8

Spec. No. C730Q8 Issued Date 2009.07.02 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB12N03Q8 ID 12A RDSON(max) 11.5m Description The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

 6.1. Size:280K  cystek
 mtb12n03j3.pdf pdf_icon

MTB12N03Q8

Spec. No. C730J3 Issued Date 2011.03.04 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB12N03J3 ID 40A 8.5m (typ.) RDSON@VGS=10V, ID=15A 13.5m (typ.) RDSON@VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynam

 7.1. Size:295K  cystek
 mtb12n04j3.pdf pdf_icon

MTB12N03Q8

Spec. No. C450J3 Issued Date 2009.03.13 CYStech Electronics Corp. Revised Date 2010.05.17 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 40V ID 30A MTB12N04J3 RDS(ON) 12m Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package & Halogen-free package Symbol Outline MTB12N0

 9.1. Size:393K  cystek
 mtb12p06j3.pdf pdf_icon

MTB12N03Q8

Spec. No. C584J3 Issued Date 2014.07.20 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB12P06J3 ID -70A RDS(ON)@VGS=-10V, ID=-20A 10.2m (typ) RDS(ON)@VGS=-4.5V, ID=-20A 11.9m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package

ПОКАЗАТЬ ЕЩЁ

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