MTB1D7N03E3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTB1D7N03E3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 203 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 935 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MTB1D7N03E3 MOSFET
MTB1D7N03E3 Datasheet (PDF)
mtb1d7n03e3.pdf

Spec. No. : C948E3 Issued Date : 2014.03.05 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB1D7N03E3 ID @VGS=10V 203A2m RDSON(TYP) @ VGS=10V, ID=30A 2.6m RDSON(TYP) @ VGS=4.5V, ID=20A Features Low Gate Charge Simple Drive Requirement Fast Switching Characteristic RoHS compliant pac
mtb1d7n03ath8.pdf

Spec. No. : C948H8 Issued Date : 2014.06.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB1D7N03ATH8BVDSS 30VID @VGS=10V 90ARDS(ON)@VGS=10V, ID=30A 1.5 m(typ)Features RDS(ON)@VGS=4.5V, ID=20A 2.1 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic
mtb1d0n03rh8.pdf

Spec. No. : C012H8 Issued Date : 2018.07.19 CYStech Electronics Corp. Revised Date : 2019.01.03 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTB1D0N03RH8 BVDSS 30V ID@VGS=10V, TC=25C(silicon limit) 200A ID@VGS=10V, TC=25C(package limit) 84A ID@VGS=10V, TA=25C 34.5A Features 0.7m VGS=10V, ID=20A Single Drive Requirement RDSON(TYP) 1.
mtb1d0n03rh8.pdf

Spec. No. : C012H8 Issued Date : 2018.07.19 CYStech Electronics Corp. Revised Date : 2019.01.03 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTB1D0N03RH8 BVDSS 30V ID@VGS=10V, TC=25C(silicon limit) 200A ID@VGS=10V, TC=25C(package limit) 84A ID@VGS=10V, TA=25C 34.5A Features 0.7m VGS=10V, ID=20A Single Drive Requirement RDSON(TYP) 1.
Otros transistores... MTB14A03V8 , MTB14P03Q8 , MTB15P04J3 , MTB16P04J3 , MTB17A03Q8 , MTB17A03V8 , MTB17N03Q8 , MTB1D7N03ATH8 , RFP50N06 , MTB1K6N06KS6R , MTB20A03Q8 , MTB20C03J4 , MTB20N03AQ8 , MTB20N03Q8 , MTB20N06J3 , MTB20P03L3 , MTB22N04J3 .



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