MTB20P03L3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTB20P03L3
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 1060 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: SOT-223
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MTB20P03L3 Datasheet (PDF)
mtb20p03l3.pdf

Spec. No. : C391L3 Issued Date : 2010.12.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTB20P03L3 ID -10ARDSON(MAX) 20m Description The MTB20P03L3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost
mtb20n20e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB20N20E/DDesigner's Data SheetMTB20N20ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES200 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.16 OHMthan any existing surface m
mtb20n20erev2x.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB20N20E/DDesigner's Data SheetMTB20N20ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES200 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.16 OHMthan any existing surface m
mtb20n04j3.pdf

Spec. No. : C978J3 Issued Date : 2015.01.05 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTB20N04J3 ID@VGS=10V, TC=25C 23A ID@VGS=10V, TC=100C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package
Otros transistores... MTB1D7N03ATH8 , MTB1D7N03E3 , MTB1K6N06KS6R , MTB20A03Q8 , MTB20C03J4 , MTB20N03AQ8 , MTB20N03Q8 , MTB20N06J3 , IRLB4132 , MTB22N04J3 , MTB23C04J4 , MTB24B03Q8 , MTB25A04Q8 , MTB25N04J3 , MTB25P04V8 , MTB25P06FP , MTB30N06J3 .



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