MTB20P03L3 Specs and Replacement

Type Designator: MTB20P03L3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1060 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SOT-223

MTB20P03L3 substitution

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MTB20P03L3 datasheet

 ..1. Size:296K  cystek
 mtb20p03l3.pdf pdf_icon

MTB20P03L3

Spec. No. C391L3 Issued Date 2010.12.06 CYStech Electronics Corp. Revised Date Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTB20P03L3 ID -10A RDSON(MAX) 20m Description The MTB20P03L3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost ... See More ⇒

 9.1. Size:222K  motorola
 mtb20n20e.pdf pdf_icon

MTB20P03L3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB20N20E/D Designer's Data Sheet MTB20N20E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.16 OHM than any existing surface m... See More ⇒

 9.2. Size:258K  motorola
 mtb20n20erev2x.pdf pdf_icon

MTB20P03L3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB20N20E/D Designer's Data Sheet MTB20N20E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.16 OHM than any existing surface m... See More ⇒

 9.3. Size:366K  cystek
 mtb20n04j3.pdf pdf_icon

MTB20P03L3

Spec. No. C978J3 Issued Date 2015.01.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB20N04J3 ID@VGS=10V, TC=25 C 23A ID@VGS=10V, TC=100 C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package ... See More ⇒

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Detailed specifications: MTB1D7N03ATH8, MTB1D7N03E3, MTB1K6N06KS6R, MTB20A03Q8, MTB20C03J4, MTB20N03AQ8, MTB20N03Q8, MTB20N06J3, CS150N03A8, MTB22N04J3, MTB23C04J4, MTB24B03Q8, MTB25A04Q8, MTB25N04J3, MTB25P04V8, MTB25P06FP, MTB30N06J3

Keywords - MTB20P03L3 MOSFET specs

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