MTB30N06J3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB30N06J3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 58 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TO-252

 Búsqueda de reemplazo de MTB30N06J3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

MTB30N06J3 datasheet

 ..1. Size:281K  cystek
 mtb30n06j3.pdf pdf_icon

MTB30N06J3

Spec. No. C699J3 Issued Date 2012.05.16 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB30N06J3 ID 22A RDS(ON)@VGS=10V, ID=18A 27m (typ) RDS(ON)@VGS=4.5V, ID=10A 31m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compli

 6.1. Size:262K  motorola
 mtb30n06vlrev4.pdf pdf_icon

MTB30N06J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30N06VL/D Designer's Data Sheet MTB30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.050 OHM area product abou

 6.2. Size:227K  motorola
 mtb30n06vl.pdf pdf_icon

MTB30N06J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30N06VL/D Designer's Data Sheet MTB30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.050 OHM area product abou

 6.3. Size:324K  cystek
 mtb30n06v8.pdf pdf_icon

MTB30N06J3

Spec. No. C699V8 Issued Date 2012.03.20 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTB30N06V8 ID 6.8A VGS=10V, ID=6.8A 24m RDSON(TYP) VGS=4.5V, ID=4A 28m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline

MOSTRAR MÁS

Otros transistores... MTB20P03L3, MTB22N04J3, MTB23C04J4, MTB24B03Q8, MTB25A04Q8, MTB25N04J3, MTB25P04V8, MTB25P06FP, 4N60, MTB30N06Q8, MTB30N06V8, MTB30P06J3, MTB35N04J3, MTB3D0N03ATH8, MTB40N06E3, MTB40P04J3, MTB40P06J3