MTB30P06J3 Todos los transistores

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MTB30P06J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB30P06J3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 31 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 24 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 134 pF

Resistencia drenaje-fuente RDS(on): 0.028 Ohm

Empaquetado / Estuche: TO-252

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MTB30P06J3 Datasheet (PDF)

1.1. mtb30p06j3.pdf Size:280K _cystek

MTB30P06J3
MTB30P06J3

Spec. No. : C796J3 Issued Date : 2012.06.19 CYStech Electronics Corp. Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB30P06J3 ID -24A RDS(ON)@VGS=-10V, ID=-20A 28mΩ(typ) RDS(ON)@VGS=-4.5V, ID=-20A 33mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free packag

2.1. mtb30p06vrev1x.pdf Size:247K _motorola

MTB30P06J3
MTB30P06J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's? Data Sheet MTB30P06V TMOS V? Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET PChannel EnhancementMode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.080 OHM tance area product about onehalf th

2.2. mtb30p06v.pdf Size:215K _motorola

MTB30P06J3
MTB30P06J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's? Data Sheet MTB30P06V TMOS V? Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET PChannel EnhancementMode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.080 OHM tance area product about onehalf th

2.3. mtb30p06v.pdf Size:81K _onsemi

MTB30P06J3
MTB30P06J3

MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the http://onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 30 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on) = 8

Otros transistores... MTB24B03Q8 , MTB25A04Q8 , MTB25N04J3 , MTB25P04V8 , MTB25P06FP , MTB30N06J3 , MTB30N06Q8 , MTB30N06V8 , IRF9530 , MTB35N04J3 , MTB3D0N03ATH8 , MTB40N06E3 , MTB40P04J3 , MTB40P06J3 , MTB40P06Q8 , MTB40P06V8 , MTB44P04J3 .

 


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Introduzca al menos 1 números o letras