MTB30P06J3 Specs and Replacement

Type Designator: MTB30P06J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 134 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO-252

MTB30P06J3 substitution

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MTB30P06J3 datasheet

 ..1. Size:280K  cystek
mtb30p06j3.pdf pdf_icon

MTB30P06J3

Spec. No. C796J3 Issued Date 2012.06.19 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB30P06J3 ID -24A RDS(ON)@VGS=-10V, ID=-20A 28m (typ) RDS(ON)@VGS=-4.5V, ID=-20A 33m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag... See More ⇒

 6.1. Size:215K  motorola
mtb30p06v.pdf pdf_icon

MTB30P06J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's Data Sheet MTB30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product abou... See More ⇒

 6.2. Size:247K  motorola
mtb30p06vrev1x.pdf pdf_icon

MTB30P06J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's Data Sheet MTB30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product abou... See More ⇒

 6.3. Size:81K  onsemi
mtb30p06v mtb30p06vt4 mtb30p06vt4g.pdf pdf_icon

MTB30P06J3

MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 30 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on) ... See More ⇒

Detailed specifications: MTB24B03Q8, MTB25A04Q8, MTB25N04J3, MTB25P04V8, MTB25P06FP, MTB30N06J3, MTB30N06Q8, MTB30N06V8, 2SK3568, MTB35N04J3, MTB3D0N03ATH8, MTB40N06E3, MTB40P04J3, MTB40P06J3, MTB40P06Q8, MTB40P06V8, MTB44P04J3

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