MTB30P06J3 Datasheet and Replacement

Spec. No. : C796J3 Issued Date : 2012.06.19 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB30P06J3 ID -24ARDS(ON)@VGS=-10V, ID=-20A 28m(typ)RDS(ON)@VGS=-4.5V, ID=-20A 33m(typ)Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30P06V/DDesigner's Data SheetMTB30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product abou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30P06V/DDesigner's Data SheetMTB30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product abou

MTB30P06VPreferred DevicePower MOSFET30 Amps, 60 VoltsP-Channel D2PAKThis Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power30 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)