MTB30P06J3 Specs and Replacement
Type Designator: MTB30P06J3
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 134 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO-252
MTB30P06J3 substitution
- MOSFET ⓘ Cross-Reference Search
MTB30P06J3 datasheet
mtb30p06j3.pdf
Spec. No. C796J3 Issued Date 2012.06.19 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB30P06J3 ID -24A RDS(ON)@VGS=-10V, ID=-20A 28m (typ) RDS(ON)@VGS=-4.5V, ID=-20A 33m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag... See More ⇒
mtb30p06v.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's Data Sheet MTB30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product abou... See More ⇒
mtb30p06vrev1x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's Data Sheet MTB30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product abou... See More ⇒
mtb30p06v mtb30p06vt4 mtb30p06vt4g.pdf
MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 30 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on) ... See More ⇒
Detailed specifications: MTB24B03Q8, MTB25A04Q8, MTB25N04J3, MTB25P04V8, MTB25P06FP, MTB30N06J3, MTB30N06Q8, MTB30N06V8, 2SK3568, MTB35N04J3, MTB3D0N03ATH8, MTB40N06E3, MTB40P04J3, MTB40P06J3, MTB40P06Q8, MTB40P06V8, MTB44P04J3
Keywords - MTB30P06J3 MOSFET specs
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