MTB40P06V8 Todos los transistores

 

MTB40P06V8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTB40P06V8
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 21 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 69 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
   Paquete / Cubierta: DFN3X3
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MTB40P06V8 Datasheet (PDF)

 ..1. Size:322K  cystek
 mtb40p06v8.pdf pdf_icon

MTB40P06V8

Spec. No. : C796V8 Issued Date : 2013.10.17 CYStech Electronics Corp.Revised Date : 2013.10.23 Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60VMTB40P06V8 ID -5ARDSON@VGS=-10V, ID=-4.9A 48m(typ) RDSON@VGS=-4.5V, ID=-3A 59m(typ) Description The MTB40P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit

 6.1. Size:696K  cystek
 mtb40p06q8.pdf pdf_icon

MTB40P06V8

Spec. No. : C796Q8 Issued Date : 2011.12.23 CYStech Electronics Corp. Revised Date : 2018.03.09 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -60V MTB40P06Q8 ID @ TA=25C, VGS=-10V -6.2A RDSON@VGS=-10V, ID=-6.2A 33m(typ) RDSON@VGS=-4.5V,ID=-5A 45m(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-f

 6.2. Size:295K  cystek
 mtb40p06j3.pdf pdf_icon

MTB40P06V8

Spec. No. : C796J3 Issued Date : 2010.02.11 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB40P06J3 ID -17A62m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTB40P06J3 TO-252(DPAK)

 7.1. Size:340K  cystek
 mtb40p04j3.pdf pdf_icon

MTB40P06V8

Spec. No. : C595J3 Issued Date : 2010.04.19 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB40P04J3 ID -12A40.5m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB40P04J3 TO-252 GGate DDrain G D S S

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: ME35N10 | GSM2341 | RRL025P03 | STK14N10 | CSFR6N60U | BSS123A | WM10N33M

 

 
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