MTB55N03N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB55N03N3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.7 nS

Cossⓘ - Capacitancia de salida: 46 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOT-23

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MTB55N03N3 datasheet

 ..1. Size:308K  cystek
 mtb55n03n3.pdf pdf_icon

MTB55N03N3

Spec. No. C723N3 Issued Date 2009.06.12 CYStech Electronics Corp. Revised Date 2012.10.08 Page No. 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30V MTB55N03N3 ID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB5

 6.1. Size:279K  cystek
 mtb55n03j3.pdf pdf_icon

MTB55N03N3

Spec. No. C723J3 Issued Date 2012.05.07 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB55N03J3 ID 24A RDS(ON)@VGS=10V, ID=12A 34m (typ) RDS(ON)@VGS=4.5V, ID=6A 58m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead

 7.1. Size:151K  motorola
 mtb55n06z.pdf pdf_icon

MTB55N03N3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB55N06Z/D Advance Information MTB55N06Z TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 55 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 18 m withstand high energy in the avalanche mode and switch efficiently.

 7.2. Size:146K  motorola
 mtb55n06zrev1.pdf pdf_icon

MTB55N03N3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB55N06Z/D Advance Information MTB55N06Z TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 55 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 18 m withstand high energy in the avalanche mode and switch efficiently.

MOSTRAR MÁS

Otros transistores... MTB40P06Q8, MTB40P06V8, MTB44P04J3, MTB45A06Q8, MTB45P03Q8, MTB4D0N03ATH8, MTB4D0N03ATV8, MTB55N03J3, P60NF06, MTB55N06Q8, MTB55N10J3, MTB55N10Q8, MTB600N03N3, MTB60A06Q8, MTB60B06Q8, MTB60N06J3, MTB60N06L3