All MOSFET. MTB55N03N3 Datasheet

 

MTB55N03N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB55N03N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2 nC
   trⓘ - Rise Time: 3.7 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT-23

 MTB55N03N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB55N03N3 Datasheet (PDF)

 ..1. Size:308K  cystek
 mtb55n03n3.pdf

MTB55N03N3 MTB55N03N3

Spec. No. : C723N3 Issued Date : 2009.06.12 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30VMTB55N03N3 ID 4.8ARDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB5

 6.1. Size:279K  cystek
 mtb55n03j3.pdf

MTB55N03N3 MTB55N03N3

Spec. No. : C723J3 Issued Date : 2012.05.07 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB55N03J3 ID 24ARDS(ON)@VGS=10V, ID=12A 34m(typ) RDS(ON)@VGS=4.5V, ID=6A 58m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead

 7.1. Size:151K  motorola
 mtb55n06z.pdf

MTB55N03N3 MTB55N03N3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB55N06Z/DAdvance InformationMTB55N06ZTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 55 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 18 mwithstand high energy in the avalanche mode and switch efficiently.

 7.2. Size:146K  motorola
 mtb55n06zrev1.pdf

MTB55N03N3 MTB55N03N3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB55N06Z/DAdvance InformationMTB55N06ZTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 55 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 18 mwithstand high energy in the avalanche mode and switch efficiently.

 7.3. Size:318K  cystek
 mtb55n06q8.pdf

MTB55N03N3 MTB55N03N3

Spec. No. : C746Q8 Issued Date : 2009.10.19 CYStech Electronics Corp.Revised Date : 2013.12.20 Page No. : 1/9 N-Channel Logic Level Enhancement Mode MOSFET BVDSS 60VMTB55N06Q8ID 8ARDSON@VGS=10V, ID=6A 35m(typ)RDSON@VGS=5V, ID=5A 38m(typ)Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MTD5P06V

 

 
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