MTB55N03N3 Specs and Replacement

Type Designator: MTB55N03N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.7 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT-23

MTB55N03N3 substitution

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MTB55N03N3 datasheet

 ..1. Size:308K  cystek
 mtb55n03n3.pdf pdf_icon

MTB55N03N3

Spec. No. C723N3 Issued Date 2009.06.12 CYStech Electronics Corp. Revised Date 2012.10.08 Page No. 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30V MTB55N03N3 ID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB5... See More ⇒

 6.1. Size:279K  cystek
 mtb55n03j3.pdf pdf_icon

MTB55N03N3

Spec. No. C723J3 Issued Date 2012.05.07 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB55N03J3 ID 24A RDS(ON)@VGS=10V, ID=12A 34m (typ) RDS(ON)@VGS=4.5V, ID=6A 58m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead... See More ⇒

 7.1. Size:151K  motorola
 mtb55n06z.pdf pdf_icon

MTB55N03N3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB55N06Z/D Advance Information MTB55N06Z TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 55 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 18 m withstand high energy in the avalanche mode and switch efficiently.... See More ⇒

 7.2. Size:146K  motorola
 mtb55n06zrev1.pdf pdf_icon

MTB55N03N3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB55N06Z/D Advance Information MTB55N06Z TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 55 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 18 m withstand high energy in the avalanche mode and switch efficiently.... See More ⇒

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Detailed specifications: MTB40P06Q8, MTB40P06V8, MTB44P04J3, MTB45A06Q8, MTB45P03Q8, MTB4D0N03ATH8, MTB4D0N03ATV8, MTB55N03J3, P60NF06, MTB55N06Q8, MTB55N10J3, MTB55N10Q8, MTB600N03N3, MTB60A06Q8, MTB60B06Q8, MTB60N06J3, MTB60N06L3

Keywords - MTB55N03N3 MOSFET specs

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