MTB55N06Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C746Q8 Issued Date : 2009.10.19 CYStech Electronics Corp.Revised Date : 2013.12.20 Page No. : 1/9 N-Channel Logic Level Enhancement Mode MOSFET BVDSS 60VMTB55N06Q8ID 8ARDSON@VGS=10V, ID=6A 35m(typ)RDSON@VGS=5V, ID=5A 38m(typ)Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB55N06Z/DAdvance InformationMTB55N06ZTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 55 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 18 mwithstand high energy in the avalanche mode and switch efficiently.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB55N06Z/DAdvance InformationMTB55N06ZTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 55 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 18 mwithstand high energy in the avalanche mode and switch efficiently.

Spec. No. : C723N3 Issued Date : 2009.06.12 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30VMTB55N03N3 ID 4.8ARDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB5

Spec. No. : C723J3 Issued Date : 2012.05.07 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB55N03J3 ID 24ARDS(ON)@VGS=10V, ID=12A 34m(typ) RDS(ON)@VGS=4.5V, ID=6A 58m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead