MTB55N06Q8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB55N06Q8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 44 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOP-8

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MTB55N06Q8 datasheet

 ..1. Size:318K  cystek
 mtb55n06q8.pdf pdf_icon

MTB55N06Q8

Spec. No. C746Q8 Issued Date 2009.10.19 CYStech Electronics Corp. Revised Date 2013.12.20 Page No. 1/9 N-Channel Logic Level Enhancement Mode MOSFET BVDSS 60V MTB55N06Q8 ID 8A RDSON@VGS=10V, ID=6A 35m (typ) RDSON@VGS=5V, ID=5A 38m (typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating

 6.1. Size:151K  motorola
 mtb55n06z.pdf pdf_icon

MTB55N06Q8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB55N06Z/D Advance Information MTB55N06Z TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 55 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 18 m withstand high energy in the avalanche mode and switch efficiently.

 6.2. Size:146K  motorola
 mtb55n06zrev1.pdf pdf_icon

MTB55N06Q8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB55N06Z/D Advance Information MTB55N06Z TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 55 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 18 m withstand high energy in the avalanche mode and switch efficiently.

 7.1. Size:308K  cystek
 mtb55n03n3.pdf pdf_icon

MTB55N06Q8

Spec. No. C723N3 Issued Date 2009.06.12 CYStech Electronics Corp. Revised Date 2012.10.08 Page No. 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30V MTB55N03N3 ID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB5

MOSTRAR MÁS

Otros transistores... MTB40P06V8, MTB44P04J3, MTB45A06Q8, MTB45P03Q8, MTB4D0N03ATH8, MTB4D0N03ATV8, MTB55N03J3, MTB55N03N3, 75N75, MTB55N10J3, MTB55N10Q8, MTB600N03N3, MTB60A06Q8, MTB60B06Q8, MTB60N06J3, MTB60N06L3, MTB60P06E3