MTB55N10J3 Todos los transistores

 ..1. Size:305K  cystek
 mtb55n10j3.pdf

Spec. No. C863J3 Issued Date 2012.06.25 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTB55N10J3 ID 18A 60m VGS=10V, ID=18A RDSON(TYP) 59m VGS=4.5V, ID=12A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equiva

 6.1. Size:309K  cystek
 mtb55n10q8.pdf

Spec. No. C863Q8 Issued Date 2012.12.13 CYStech Electronics Corp. Revised Date 2013.10.23 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTB55N10Q8 ID 4.5A 55m VGS=10V, ID=4.5A RDSON(TYP) 58m VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbol Outline MTB55

 8.1. Size:151K  motorola
 mtb55n06z.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB55N06Z/D Advance Information MTB55N06Z TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 55 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 18 m withstand high energy in the avalanche mode and switch efficiently.

 8.2. Size:146K  motorola
 mtb55n06zrev1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB55N06Z/D Advance Information MTB55N06Z TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 55 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 18 m withstand high energy in the avalanche mode and switch efficiently.

 8.3. Size:308K  cystek
 mtb55n03n3.pdf

Spec. No. C723N3 Issued Date 2009.06.12 CYStech Electronics Corp. Revised Date 2012.10.08 Page No. 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30V MTB55N03N3 ID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB5

 8.4. Size:279K  cystek
 mtb55n03j3.pdf

Spec. No. C723J3 Issued Date 2012.05.07 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB55N03J3 ID 24A RDS(ON)@VGS=10V, ID=12A 34m (typ) RDS(ON)@VGS=4.5V, ID=6A 58m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead

 8.5. Size:318K  cystek
 mtb55n06q8.pdf

Spec. No. C746Q8 Issued Date 2009.10.19 CYStech Electronics Corp. Revised Date 2013.12.20 Page No. 1/9 N-Channel Logic Level Enhancement Mode MOSFET BVDSS 60V MTB55N06Q8 ID 8A RDSON@VGS=10V, ID=6A 35m (typ) RDSON@VGS=5V, ID=5A 38m (typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating