MTB55N10J3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTB55N10J3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 71
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
TO-252
MTB55N10J3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTB55N10J3
Datasheet (PDF)
..1. Size:305K cystek
mtb55n10j3.pdf 
Spec. No. : C863J3 Issued Date : 2012.06.25 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTB55N10J3 ID 18A60m VGS=10V, ID=18A RDSON(TYP) 59m VGS=4.5V, ID=12A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equiva
6.1. Size:309K cystek
mtb55n10q8.pdf
Spec. No. : C863Q8 Issued Date : 2012.12.13 CYStech Electronics Corp.Revised Date : 2013.10.23 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTB55N10Q8 ID 4.5A55m VGS=10V, ID=4.5A RDSON(TYP) 58m VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbol Outline MTB55
8.1. Size:151K motorola
mtb55n06z.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB55N06Z/DAdvance InformationMTB55N06ZTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 55 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 18 mwithstand high energy in the avalanche mode and switch efficiently.
8.2. Size:146K motorola
mtb55n06zrev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB55N06Z/DAdvance InformationMTB55N06ZTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 55 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 18 mwithstand high energy in the avalanche mode and switch efficiently.
8.3. Size:308K cystek
mtb55n03n3.pdf
Spec. No. : C723N3 Issued Date : 2009.06.12 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30VMTB55N03N3 ID 4.8ARDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB5
8.4. Size:279K cystek
mtb55n03j3.pdf
Spec. No. : C723J3 Issued Date : 2012.05.07 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB55N03J3 ID 24ARDS(ON)@VGS=10V, ID=12A 34m(typ) RDS(ON)@VGS=4.5V, ID=6A 58m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead
8.5. Size:318K cystek
mtb55n06q8.pdf
Spec. No. : C746Q8 Issued Date : 2009.10.19 CYStech Electronics Corp.Revised Date : 2013.12.20 Page No. : 1/9 N-Channel Logic Level Enhancement Mode MOSFET BVDSS 60VMTB55N06Q8ID 8ARDSON@VGS=10V, ID=6A 35m(typ)RDSON@VGS=5V, ID=5A 38m(typ)Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating
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