MTB55N10Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTB55N10Q8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 71 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SOP-8

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MTB55N10Q8 Datasheet (PDF)

..1. Size:309K cystek
mtb55n10q8.pdf

Spec. No. : C863Q8 Issued Date : 2012.12.13 CYStech Electronics Corp.Revised Date : 2013.10.23 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTB55N10Q8 ID 4.5A55m VGS=10V, ID=4.5A RDSON(TYP) 58m VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbol Outline MTB55

6.1. Size:305K cystek
mtb55n10j3.pdf

Spec. No. : C863J3 Issued Date : 2012.06.25 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTB55N10J3 ID 18A60m VGS=10V, ID=18A RDSON(TYP) 59m VGS=4.5V, ID=12A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equiva

8.1. Size:151K motorola
mtb55n06z.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB55N06Z/DAdvance InformationMTB55N06ZTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 55 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 18 mwithstand high energy in the avalanche mode and switch efficiently.

8.2. Size:146K motorola
mtb55n06zrev1.pdf

8.3. Size:308K cystek
mtb55n03n3.pdf

Spec. No. : C723N3 Issued Date : 2009.06.12 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30VMTB55N03N3 ID 4.8ARDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB5

8.4. Size:279K cystek
mtb55n03j3.pdf

Spec. No. : C723J3 Issued Date : 2012.05.07 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB55N03J3 ID 24ARDS(ON)@VGS=10V, ID=12A 34m(typ) RDS(ON)@VGS=4.5V, ID=6A 58m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead

8.5. Size:318K cystek
mtb55n06q8.pdf

Spec. No. : C746Q8 Issued Date : 2009.10.19 CYStech Electronics Corp.Revised Date : 2013.12.20 Page No. : 1/9 N-Channel Logic Level Enhancement Mode MOSFET BVDSS 60VMTB55N06Q8ID 8ARDSON@VGS=10V, ID=6A 35m(typ)RDSON@VGS=5V, ID=5A 38m(typ)Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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