Справочник MOSFET. MTB55N10Q8

 

MTB55N10Q8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTB55N10Q8
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 16 nC
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 71 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для MTB55N10Q8

 

 

MTB55N10Q8 Datasheet (PDF)

 ..1. Size:309K  cystek
 mtb55n10q8.pdf

MTB55N10Q8 MTB55N10Q8

Spec. No. : C863Q8 Issued Date : 2012.12.13 CYStech Electronics Corp.Revised Date : 2013.10.23 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTB55N10Q8 ID 4.5A55m VGS=10V, ID=4.5A RDSON(TYP) 58m VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbol Outline MTB55

 6.1. Size:305K  cystek
 mtb55n10j3.pdf

MTB55N10Q8 MTB55N10Q8

Spec. No. : C863J3 Issued Date : 2012.06.25 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTB55N10J3 ID 18A60m VGS=10V, ID=18A RDSON(TYP) 59m VGS=4.5V, ID=12A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equiva

 8.1. Size:151K  motorola
 mtb55n06z.pdf

MTB55N10Q8 MTB55N10Q8

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB55N06Z/DAdvance InformationMTB55N06ZTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 55 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 18 mwithstand high energy in the avalanche mode and switch efficiently.

 8.2. Size:146K  motorola
 mtb55n06zrev1.pdf

MTB55N10Q8 MTB55N10Q8

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB55N06Z/DAdvance InformationMTB55N06ZTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 55 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 18 mwithstand high energy in the avalanche mode and switch efficiently.

 8.3. Size:308K  cystek
 mtb55n03n3.pdf

MTB55N10Q8 MTB55N10Q8

Spec. No. : C723N3 Issued Date : 2009.06.12 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30VMTB55N03N3 ID 4.8ARDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB5

 8.4. Size:279K  cystek
 mtb55n03j3.pdf

MTB55N10Q8 MTB55N10Q8

Spec. No. : C723J3 Issued Date : 2012.05.07 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB55N03J3 ID 24ARDS(ON)@VGS=10V, ID=12A 34m(typ) RDS(ON)@VGS=4.5V, ID=6A 58m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead

 8.5. Size:318K  cystek
 mtb55n06q8.pdf

MTB55N10Q8 MTB55N10Q8

Spec. No. : C746Q8 Issued Date : 2009.10.19 CYStech Electronics Corp.Revised Date : 2013.12.20 Page No. : 1/9 N-Channel Logic Level Enhancement Mode MOSFET BVDSS 60VMTB55N06Q8ID 8ARDSON@VGS=10V, ID=6A 35m(typ)RDSON@VGS=5V, ID=5A 38m(typ)Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: APM9922K

 

 
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