MTB60P06H8 Todos los transistores

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 mtb60p06h8.pdf

Spec. No. C796H8 Issued Date 2013.08.19 CYStech Electronics Corp. Revised Date 2013.09.02 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB60P06H8 ID -5A 56m VGS=-10V, ID=-5A RDSON(TYP) 65m VGS=-4.5V, ID=-4.5A Description The MTB60P06H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination

 6.1. Size:261K  cystek
 mtb60p06e3.pdf

Spec. No. C796E3 Issued Date 2011.12.05 CYStech Electronics Corp. Revised Date 2011.12.28 Page No. 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB60P06E3 ID -20A 57m Features RDSON(TYP)@VGS=-10V,ID=-15A Low Gate Charge 67m RDSON(TYP)@VGS=-4.5V,ID=-7A Simple Drive Requirement Pb-free lead plating package Equivalent Circui

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 mtb60p15h8.pdf

Spec. No. C960H8 Issued Date 2014.10.30 CYStech Electronics Corp. Revised Date 2014.11.14 Page No. 1/10 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTB60P15H8 ID@VGS=-10V, TC=25 C -23A ID@VGS=-10V, TA=25 C -5.9A VGS=-10V, ID=-5.2A 56m Features RDSON(TYP) VGS=-4.5V, ID=-5A 60m Single Drive Requirement Low On-resistance Fast Switchi

 9.1. Size:216K  motorola
 mtb60n05hdl.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB60N05HDL/D Product Preview MTB60N05HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.014 OHM than any existing surface mou

 9.2. Size:243K  motorola
 mtb60n06hd.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB60N06HD/D Designer's Data Sheet MTB60N06HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.014 OHM than any existing sur

 9.3. Size:280K  motorola
 mtb60n06hdrev2x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB60N06HD/D Designer's Data Sheet MTB60N06HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.014 OHM than any existing sur

 9.4. Size:306K  cystek
 mtb60b06q8.pdf

Spec. No. C796Q8 Issued Date 2013.07.08 CYStech Electronics Corp. Revised Date Page No. 1/9 Dual P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB60B06Q8 ID -4.5A 56m (typ.) RDSON(MAX)@VGS=-10V, ID=-3.5A 66m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-3A Description The MTB60B06Q8 provides the designer with the best combination of fast switching, ruggediz

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 mtb600n03n3.pdf

Spec. No. C954N3 Issued Date 2014.06.24 CYStech Electronics Corp. Revised Date Page No. 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTB600N03N3 ID@VGS=4.5V 1.6A 448m (typ.) RDSON@VGS=4.5V, ID=200mA 809m (typ.) RDSON@VGS=2.5V, ID=100mA Features Low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23

 9.6. Size:280K  cystek
 mtb60n06j3.pdf

Spec. No. C708J3 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 60V MTB60N06J3 ID 16A 35m (typ.) RDSON(MAX)@VGS=10V, ID=10A 40m (typ.) RDSON(MAX)@VGS=5V, ID=8A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalen

 9.7. Size:293K  cystek
 mtb60n06l3.pdf

Spec. No. C708L3 Issued Date 2009.05.26 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60V MTB60N06L3 ID 5.9A 41m (typ) RDSON@VGS=10V, ID=5A 46m (typ) RDSON@VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circui

 9.8. Size:306K  cystek
 mtb60a06q8.pdf

Spec. No. C708Q8 Issued Date 2010.12.16 CYStech Electronics Corp. Revised Date 2012.08.06 Page No. 1/9 Dual N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB60A06Q8 ID 7A RDSON@VGS=10V, ID=5A 37m (typ) RDSON@VGS=5V, ID=4A 42m (typ) Description The MTB60A06Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low