MTB60P06H8 Specs and Replacement

Type Designator: MTB60P06H8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V

Qg ⓘ - Total Gate Charge: 26 nC

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: DFN5X6

MTB60P06H8 substitution

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MTB60P06H8 datasheet

 ..1. Size:288K  cystek
 mtb60p06h8.pdf pdf_icon

MTB60P06H8

Spec. No. C796H8 Issued Date 2013.08.19 CYStech Electronics Corp. Revised Date 2013.09.02 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB60P06H8 ID -5A 56m VGS=-10V, ID=-5A RDSON(TYP) 65m VGS=-4.5V, ID=-4.5A Description The MTB60P06H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination ... See More ⇒

 6.1. Size:261K  cystek
 mtb60p06e3.pdf pdf_icon

MTB60P06H8

Spec. No. C796E3 Issued Date 2011.12.05 CYStech Electronics Corp. Revised Date 2011.12.28 Page No. 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB60P06E3 ID -20A 57m Features RDSON(TYP)@VGS=-10V,ID=-15A Low Gate Charge 67m RDSON(TYP)@VGS=-4.5V,ID=-7A Simple Drive Requirement Pb-free lead plating package Equivalent Circui... See More ⇒

 8.1. Size:444K  cystek
 mtb60p15h8.pdf pdf_icon

MTB60P06H8

Spec. No. C960H8 Issued Date 2014.10.30 CYStech Electronics Corp. Revised Date 2014.11.14 Page No. 1/10 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTB60P15H8 ID@VGS=-10V, TC=25 C -23A ID@VGS=-10V, TA=25 C -5.9A VGS=-10V, ID=-5.2A 56m Features RDSON(TYP) VGS=-4.5V, ID=-5A 60m Single Drive Requirement Low On-resistance Fast Switchi... See More ⇒

 9.1. Size:216K  motorola
 mtb60n05hdl.pdf pdf_icon

MTB60P06H8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB60N05HDL/D Product Preview MTB60N05HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.014 OHM than any existing surface mou... See More ⇒

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Detailed specifications: MTB55N10J3, MTB55N10Q8, MTB600N03N3, MTB60A06Q8, MTB60B06Q8, MTB60N06J3, MTB60N06L3, MTB60P06E3, IRLB3034, MTB6D0N03AH8, MTB6D0N03ATH8, MTB6D0N03ATV8, MTB80N08J3, MTB90P06J3, MTB90P06Q8, MTBA0N10Q8, MTBA5C10AQ8

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