MTBA5C10Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTBA5C10Q8
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3(2.5) A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 18.8 nC
   trⓘ - Tiempo de subida: 35(55) nS
   Cossⓘ - Capacitancia de salida: 62(365) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125(0.21) Ohm
   Paquete / Cubierta: SOP-8

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MTBA5C10Q8 Datasheet (PDF)

..1. Size:343K cystek
mtba5c10q8.pdf

Spec. No. : C744Q8 Issued Date : 2009.10.16 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/10 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTBA5C10Q8 BVDSS 100V -100VID 3A -2.5ARDSON(MAX.) 150m 250m Description The MTBA5C10Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the d

6.1. Size:469K cystek
mtba5c10v8.pdf

Spec. No. : C744V8 Issued Date : 2014.11.03 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTBA5C10V8 BVDSS 100V -100VID@VGS=10V(-10V) 2.3A -1.7ARDSON@VGS=10V(-10V) typ. 126.5m 216m RDSON@VGS=4.5V(-4.5V) typ. 130m 227m Features Simple drive requirement Low on-resistance Fast

6.2. Size:374K cystek
mtba5c10aq8.pdf

Spec. No. : C744Q8 Issued Date : 2009.10.16 CYStech Electronics Corp.Revised Date : 2014.01.03 Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTBA5C10AQ8 BVDSS 100V -100VID 2.4A -2.2ADescription RDSON(MAX.) 150m 220m The MTBA5C10AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the

9.1. Size:349K cystek
mtba5n10fp.pdf

Spec. No. : C731FP Issued Date : 2012.12.06 CYStech Electronics Corp.Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS 100VMTBA5N10FP ID 10ARDS(ON)@VGS=10V, ID=10A 151 m(typ) RDS(ON)@VGS=4.5V, ID=10A 165 m(typ) Description The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit

9.2. Size:327K cystek
mtba5n10v8.pdf

Spec. No. : C731V8 Issued Date : 2012.08.24 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTBA5N10V8ID 7A133 m VGS=10V, ID=5A RDSON(TYP) 140 m VGS=4.5V, ID=5A Description The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switch

9.3. Size:303K cystek
mtba5n10q8.pdf

Spec. No. : C731Q8 Issued Date : 2013.07.19 CYStech Electronics Corp.Revised Date : 2013.11.05 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTBA5N10Q8 ID 3A123m VGS=10V, ID=3A RDSON(TYP) 130m VGS=4.5V, ID=2A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbol Outline MTBA5N1

9.4. Size:361K cystek
mtba5q10q8.pdf

Spec. No. : C934Q8 Issued Date : 2013.10.01 CYStech Electronics Corp.Revised Date : 2013.10.03 Page No. : 1/12 2N- AND 2P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTBA5Q10Q8 BVDSS 100V -100VID 2.5A -1.7ARDSON(MAX.) 185m 300m Description The MTBA5Q10Q8 consists of two N-channel and two P-channel enhancement-mode MOSFET in a single SOP-8 package, providi

9.5. Size:250K cystek
mtba5n10j3.pdf

Spec. No. : C731J3 Issued Date : 2009.07.07 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/8 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTBA5N10J3 ID 10A150m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTBA5N10J3 TO-252(DPAK)

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