MTBA5C10Q8 Specs and Replacement

Type Designator: MTBA5C10Q8

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3(2.5) A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35(55) nS

Cossⓘ - Output Capacitance: 62(365) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125(0.21) Ohm

Package: SOP-8

MTBA5C10Q8 substitution

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MTBA5C10Q8 datasheet

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 mtba5c10q8.pdf pdf_icon

MTBA5C10Q8

Spec. No. C744Q8 Issued Date 2009.10.16 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/10 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTBA5C10Q8 BVDSS 100V -100V ID 3A -2.5A RDSON(MAX.) 150m 250m Description The MTBA5C10Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the d... See More ⇒

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 mtba5c10v8.pdf pdf_icon

MTBA5C10Q8

Spec. No. C744V8 Issued Date 2014.11.03 CYStech Electronics Corp. Revised Date Page No. 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTBA5C10V8 BVDSS 100V -100V ID@VGS=10V(-10V) 2.3A -1.7A RDSON@VGS=10V(-10V) typ. 126.5m 216m RDSON@VGS=4.5V(-4.5V) typ. 130m 227m Features Simple drive requirement Low on-resistance Fast... See More ⇒

 6.2. Size:374K  cystek
 mtba5c10aq8.pdf pdf_icon

MTBA5C10Q8

Spec. No. C744Q8 Issued Date 2009.10.16 CYStech Electronics Corp. Revised Date 2014.01.03 Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTBA5C10AQ8 BVDSS 100V -100V ID 2.4A -2.2A Description RDSON(MAX.) 150m 220m The MTBA5C10AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the... See More ⇒

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 mtba5n10fp.pdf pdf_icon

MTBA5C10Q8

Spec. No. C731FP Issued Date 2012.12.06 CYStech Electronics Corp. Revised Date Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10FP ID 10A RDS(ON)@VGS=10V, ID=10A 151 m (typ) RDS(ON)@VGS=4.5V, ID=10A 165 m (typ) Description The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit... See More ⇒

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Detailed specifications: MTB6D0N03AH8, MTB6D0N03ATH8, MTB6D0N03ATV8, MTB80N08J3, MTB90P06J3, MTB90P06Q8, MTBA0N10Q8, MTBA5C10AQ8, AO4407A, MTBA5N10FP, MTBA5N10J3, MTBA5N10Q8, MTBA5N10V8, MTBA5Q10Q8, MTBA6C12J4, MTBB0P10J3, MTBB0P10L3

Keywords - MTBA5C10Q8 MOSFET specs

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