MTC4506J4 Todos los transistores

 

MTC4506J4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTC4506J4
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21(16) A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 8(7) nS
   Cossⓘ - Capacitancia de salida: 58(63) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0255(0.0465) Ohm
   Paquete / Cubierta: TO-252-4L
 

 Búsqueda de reemplazo de MTC4506J4 MOSFET

   - Selección ⓘ de transistores por parámetros

 

MTC4506J4 Datasheet (PDF)

 ..1. Size:355K  cystek
mtc4506j4.pdf pdf_icon

MTC4506J4

Spec. No. : C780J4 Issued Date : 2014.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTC4506J4 BVDSS 60V -60VID 5.4A -4.0ARDSON(typ.) @VGS=(-)10V 25.5m 46.5m RDSON(typ.) @VGS=(-)4.5V 28m 56.6m Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free packa

 7.1. Size:373K  cystek
mtc4506q8.pdf pdf_icon

MTC4506J4

Spec. No. : C780Q8 Issued Date : 2012.05.17 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC4506Q8 BVDSS 60V -60VID 5.3A -3.9ARDSON(typ.) @VGS=(-)10V 28m 57m RDSON(typ.) @VGS=(-)4.5V 31m 67m Description The MTC4506Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SO

 8.1. Size:543K  cystek
mtc4503q8g.pdf pdf_icon

MTC4506J4

Spec. No. : C384Q8 Issued Date : 2010.12.10 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8G Description The MTC4503Q8G consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on

 8.2. Size:763K  cystek
mtc4503lq8.pdf pdf_icon

MTC4506J4

Spec. No. : C384Q8 Issued Date : 2015.01.06 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503LQ8 Description The MTC4503LQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on

Otros transistores... MTC3585N6 , MTC3586DFA6 , MTC380Q8 , MTC4501Q8 , MTC4503AQ8 , MTC4503Q8 , MTC4503Q8G , MTC4505Q8 , IRFB4110 , MTC4506Q8 , MTC5806Q8 , MTC8402S6R , MTC8404V8 , MTC8958G6 , MTC8958Q8 , MTD06N04Q8 , MTD120C10KJ4 .

History: SMY51 | IPP028N08N3G | SMP3003 | IRFB3004

 

 
Back to Top

 


 
.