MTDN9973Q8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTDN9973Q8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SOP-8

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MTDN9973Q8 datasheet

 ..1. Size:383K  cystek
 mtdn9973q8.pdf pdf_icon

MTDN9973Q8

Spec. No. C418Q8 Issued Date 2007.09.20 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9973Q8 Description The MTDN9973Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a

 7.1. Size:383K  cystek
 mtdn9971q8.pdf pdf_icon

MTDN9973Q8

Spec. No. C415Q8 Issued Date 2007.07.05 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9971Q8 Description The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a

 8.1. Size:422K  cystek
 mtdn9926q8.pdf pdf_icon

MTDN9973Q8

Spec. No. C747Q8 Issued Date 2009.11.09 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 20V MTDN9926Q8 ID 6A 28m RDSON(MAX) Description The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8

 8.2. Size:388K  cystek
 mtdn9922q8.pdf pdf_icon

MTDN9973Q8

Spec. No. C425Q8 Issued Date 2007.12.06 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9922Q8 Description The MTDN9922Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a

MOSTRAR MÁS

Otros transistores... MTDN8233CDV8, MTDN8233X6, MTDN8810AT8, MTDN8810T8, MTDN9922Q8, MTDN9926Q8, MTDN9946Q8, MTDN9971Q8, AO4407, MTDNK2N6, MTDP2004S6R, MTDP4953BDYQ8, MTDP4953Q8, MTDP9620T8, MTE010N10E3, MTE010N10FP, MTE040N20P3